Design of a <bold>b</bold>ulk-<bold>i</bold>solated <bold>b</bold>andgap <bold>r</bold>eference with 3.7 ppm/degrees C TC in 0.35-m <bold>t</bold>riple-<bold>w</bold>ell CMOS <bold>p</bold>rocess
P. B. Basyurt And D. Y. Aksin, "Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process," INTERNATIONAL JOURNAL OF ELECTRONICS , vol.104, no.1, pp.79-92, 2017
Basyurt, P. B. And Aksin, D. Y. 2017. Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process. INTERNATIONAL JOURNAL OF ELECTRONICS , vol.104, no.1 , 79-92.
Basyurt, P. B., & Aksin, D. Y., (2017). Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process. INTERNATIONAL JOURNAL OF ELECTRONICS , vol.104, no.1, 79-92.
Basyurt, P., And D. Y. Aksin. "Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process," INTERNATIONAL JOURNAL OF ELECTRONICS , vol.104, no.1, 79-92, 2017
Basyurt, P. B. And Aksin, D. Y. . "Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process." INTERNATIONAL JOURNAL OF ELECTRONICS , vol.104, no.1, pp.79-92, 2017
Basyurt, P. B. And Aksin, D. Y. (2017) . "Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process." INTERNATIONAL JOURNAL OF ELECTRONICS , vol.104, no.1, pp.79-92.
@article{article, author={P. B. Basyurt And author={D. Y. Aksin}, title={Design of a bulk-isolated bandgap reference with 3.7 ppm/degrees C TC in 0.35-m triple-well CMOS process}, journal={INTERNATIONAL JOURNAL OF ELECTRONICS}, year=2017, pages={79-92} }