TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress

H. Kizil And C. Steınbruchel, "TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress," *THIN SOLID FILMS* , vol.449, pp.158-165, 2004

Kizil, H. And Steınbruchel, C. 2004. TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress. *THIN SOLID FILMS* , *vol.449* , 158-165.

Kizil, H., & Steınbruchel, C., (2004). TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress. *THIN SOLID FILMS* , vol.449, 158-165.

Kizil, Hüseyin, And C Steınbruchel. "TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress," *THIN SOLID FILMS* , vol.449, 158-165, 2004

Kizil, Hüseyin And Steınbruchel, C. "TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress." *THIN SOLID FILMS* , vol.449, pp.158-165, 2004

Kizil, H. And Steınbruchel, C. (2004) . "TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress." *THIN SOLID FILMS* , vol.449, pp.158-165.

@article{article, author={Hüseyin Kızıl And author={C Steınbruchel}, title={TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress}, journal={THIN SOLID FILMS}, year=2004, pages={158-165} }