H. Unlu, "Band offsets and current transport in GaN based HBTs," International Workshop on Nitride Semiconductors (IWN 2000) , vol.1, Nagoya, Japan, pp.977-980, 2000
Unlu, H. 2000. Band offsets and current transport in GaN based HBTs. International Workshop on Nitride Semiconductors (IWN 2000) , (Nagoya, Japan), 977-980.
Unlu, H., (2000). Band offsets and current transport in GaN based HBTs . International Workshop on Nitride Semiconductors (IWN 2000) (pp.977-980). Nagoya, Japan
Unlu, Hilmi. "Band offsets and current transport in GaN based HBTs," International Workshop on Nitride Semiconductors (IWN 2000), Nagoya, Japan, 2000
Unlu, Hilmi. "Band offsets and current transport in GaN based HBTs." International Workshop on Nitride Semiconductors (IWN 2000) , Nagoya, Japan, pp.977-980, 2000
Unlu, H. (2000) . "Band offsets and current transport in GaN based HBTs." International Workshop on Nitride Semiconductors (IWN 2000) , Nagoya, Japan, pp.977-980.
@conferencepaper{conferencepaper, author={Hilmi Ünlü}, title={Band offsets and current transport in GaN based HBTs}, congress name={International Workshop on Nitride Semiconductors (IWN 2000)}, city={Nagoya}, country={Japan}, year={2000}, pages={977-980} }