P. B. Basyurt And D. Y. Aksin, "Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process," IEEE International Symposium on Circuits and Systems , Seoul, South Korea, 2012
Basyurt, P. B. And Aksin, D. Y. 2012. Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process. IEEE International Symposium on Circuits and Systems , (Seoul, South Korea).
Basyurt, P. B., & Aksin, D. Y., (2012). Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process . IEEE International Symposium on Circuits and Systems, Seoul, South Korea
Basyurt, Pinar, And Devrim Yilmaz Aksin. "Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process," IEEE International Symposium on Circuits and Systems, Seoul, South Korea, 2012
Basyurt, Pinar B. And Aksin, Devrim Y. . "Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process." IEEE International Symposium on Circuits and Systems , Seoul, South Korea, 2012
Basyurt, P. B. And Aksin, D. Y. (2012) . "Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process." IEEE International Symposium on Circuits and Systems , Seoul, South Korea.
@conferencepaper{conferencepaper, author={Pinar Basak Basyurt And author={Devrim Yilmaz Aksin}, title={Design of a Curvature-Corrected Bandgap Reference with 7.5ppm/C Temperature Coefficient in 0.35 mu m CMOS Process}, congress name={IEEE International Symposium on Circuits and Systems}, city={Seoul}, country={South Korea}, year={2012}}