Alternative Approach for Determination of Energy Band Gap of Semiconductors Through Electrical Analysis


ÖZDEMİR O., Tatar B., Yilmazer D., CHOI F. P., Ürgen M. K., KUTLU K.

7th International Conference of the Balkan-Physical-Union, Alexandroupoli, Yunanistan, 9 - 13 Eylül 2009, cilt.1203, ss.875-877 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1203
  • Basıldığı Şehir: Alexandroupoli
  • Basıldığı Ülke: Yunanistan
  • Sayfa Sayıları: ss.875-877
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

Traditional way of extracting energy band gap (EG) of semiconductors from UV-Visible transmisson measurement becomes difficult once EG lies below than I eV Instead of optical excitation of electrons from valance to conduction bands, Schockley-Read-liall statistics was considered to determine EG by electrical analysis. According to the statistics, generation recombination and diffusion mechanisms were expected, differing through activation energy The first processes become dominant at intermatiate temperature where activation energy would be half of the band gap whereas the second one occurs under high temperature side where activation energy would be equal to the band gap Based on that ac conductance(capacitance)-temperature-frequency (G(C)-T-o) measurements were performed to obtain energy band gap of semiconductors having narrow EG such as iron silicide, 13-FeSi2, chromium silicide, CrSi2 grown on crystalinc silicon substrates. Satisfactory EG results were obtained as 0.85 eV and 0.25 eV for 3-FeSi2 and CrSi2, respectively. At last, the approach was tested on well known MIS (abbreviation of metal-insulator-semiconductor) type structure, the acquired EG convinced that the approach was applicable and reliable.