Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

İlik S., Yelten M. B.

IEEE Transactions on Device and Materials Reliability, vol.23, no.1, pp.51-57, 2023 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 23 Issue: 1
  • Publication Date: 2023
  • Doi Number: 10.1109/tdmr.2022.3227766
  • Journal Name: IEEE Transactions on Device and Materials Reliability
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.51-57
  • Keywords: amplifier, analog circuits, cascode, common gate, common source, ionizing radiation, TID, Total ionizing dose
  • Istanbul Technical University Affiliated: Yes


This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.