Al DOPED ZnO THIN FILMS

BAYDOĞAN N., TONKA M., GÜZELÇİMEN F.

International Conference on Nuclear Technology, Radiation Safety and Advanced Technological Researches (ICNRA 2021), Kanada, 10 - 11 Aralık 2021, cilt.1, sa.124, ss.149

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1
  • Basıldığı Ülke: Kanada
  • Sayfa Sayıları: ss.149
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

ZnO structure has Wurtzite crystal structure it has wide band gap (3.3 eV) and II-VI compound semiconductors. It has large exitation energy of 60 meV with high optical transmittance in the visible region (%80-90). ZnO layers can block 95% of all UV radition. Umpurity doped ZnO has good transparent conductiong oxide (TCO) characteristics. Low optical loss and good electrical conductivity. It has n-type semiconductor [1-3]. Grain size of the ZnO films was larger at 700C than the others, over 800C the difference between grain size increased and caused voids and pinholes on the film surface. Annealing temperature has influenced the optical properties of the films.