Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

İlik S., Kabaoglu A., Solmaz N. S., Yelten M. B.

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.66, no.11, pp.4617-4622, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 66 Issue: 11
  • Publication Date: 2019
  • Doi Number: 10.1109/ted.2019.2926931
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.4617-4622
  • Keywords: Transistors, Leakage currents, Degradation, Radiation effects, Current measurement, Logic gates, Integrated circuit modeling, Analog circuits, radiation, total ionization dose, total ionizing dose (TID), transistor modeling, RADIATION, LEAKAGE
  • Istanbul Technical University Affiliated: Yes


This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs). The effects of the finger number, channel geometry, and biasing voltages have been tested during irradiation experiments. All Berkeley short-channel insulated gate field-effect transistor model (BSIM) parameters relevant to the transistor properties affected by TID have been modified in an algorithmic flow to correctly estimate the sub-threshold leakage current for a given dose level. The maximum error of the model developed is below 8 %. A case study considering a five-stage ring oscillator is simulated with the generated model to show that the power consumption of the circuit increases and the oscillation frequency decreases around by 14 %.