Statistical MOSFET Modeling Methodology for Cryogenic Conditions


KABAOĞLU A., Solmaz N. S., İlik S., UZUN Y., Yelten M. B.

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.66, no.1, pp.66-72, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 66 Issue: 1
  • Publication Date: 2019
  • Doi Number: 10.1109/ted.2018.2877942
  • Journal Name: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.66-72
  • Keywords: BSIM modeling, cryogenic variation, cryogenic, device modeling, low temperature, MOSFET modeling, statistical modeling, TEMPERATURE, MOBILITY
  • Istanbul Technical University Affiliated: Yes

Abstract

Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I-D-V-GS and I-D-V-DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.