Novel homoleptic, dimeric zinc(II) phthalocyanines as gate dielectric for OFET device

KESER KARAOĞLAN G., GÜMRÜKÇÜ KÖSE G., GÖRDÜK S., CAN N., Gül A.

SYNTHETIC METALS, cilt.230, ss.7-11, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 230
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.synthmet.2017.04.019
  • Dergi Adı: SYNTHETIC METALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.7-11
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

A novel multicomponent system consisting of benzene-1,4-diyldimethanimine bridged dimeric zinc-phthalocyanine groups was synthesized. Firstly, a novel unsymmetrically nitro and 2,4-di-tert-butylphenoxy groups substituted zinc (II) phthalocyanine was synthesized and then nitro group was reduced to amino functional group. All newly synthesized compounds were characterized by UV-Vis, FTIR, H-1-NMR, MALDI-TOF MS and elemental analysis spectral data. The potential of these compounds as gate dielectric were investigated by fabricating bottom gate top contact OFET using poly 3-hexylthiophene-2,5-diyl as active layer. Field effect mobility values of 3.2 x 10(-4) cm(2)/V s was obtained when using ITO-coated glass as gate electrode. It was found that the density of leakage current was about 2 nA/cm(2) at 5 V. The capacitance density of 11.8 nF/cm(2) was achieved at a frequency of 5 Hz with slightly smaller values at higher frequency.