Metal-oxide thin films have recently become good candidates for the hole transport layer material, for solving the stability problem in organic photovoltaic devices. Metal oxide semiconductors (MoOx, WO3, V2O5) are very promising because of their suitable optoelectronic properties, ambient stability, high work function, and solution processability. Intrinsic n-type behavior of molybdenum oxide (MoOx) is found to enhance p-type doping effect on single-walled carbon nanotubes. In this study, the effect of using MoOx doped single-walled carbon nanotube films as hole transport layer in organic solar cells was investigated. Thin films and organic solar cells were characterized using scanning electron microscopy, atomic force microscopy, UV-NIR absorption spectroscopy and device currentvoltage measurements.