The influence of strain on the diffusion of Si dimers on Si(001)

Zoethout E., Gurlu O., ZANDVLIET H., POELSEMA B.

SURFACE SCIENCE, vol.452, pp.247-252, 2000 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 452
  • Publication Date: 2000
  • Doi Number: 10.1016/s0039-6028(00)00338-1
  • Journal Name: SURFACE SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.247-252
  • Istanbul Technical University Affiliated: No


The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit. (C) 2000 Published by Elsevier Science B.V. All rights reserved.