Modeling of current transport and 1/F noise in GaAs heterobipolar devices

Unlu H.

2nd International Conference on Unsolved Problems of Noise and Fluctuations (UPoN 99), Adelaide, Avustralya, 12 - 15 Temmuz 1999, cilt.511, ss.440-446 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 511
  • Basıldığı Şehir: Adelaide
  • Basıldığı Ülke: Avustralya
  • Sayfa Sayıları: ss.440-446
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

An analytic model is proposed to determine the effects of heterointerface properties on the current-voltage and 1/f noise characteristics of forward and reverse biased abrupt heterodiodes. The model suggests: that the 1/f noise is determined by the space charge region recombination process at small forward biases and by the minority carrier diffusion process at moderate forward biases.