Modeling of current transport and 1/F noise in GaAs heterobipolar devices


Unlu H.

2nd International Conference on Unsolved Problems of Noise and Fluctuations (UPoN 99), Adelaide, Australia, 12 - 15 July 1999, vol.511, pp.440-446 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 511
  • City: Adelaide
  • Country: Australia
  • Page Numbers: pp.440-446

Abstract

An analytic model is proposed to determine the effects of heterointerface properties on the current-voltage and 1/f noise characteristics of forward and reverse biased abrupt heterodiodes. The model suggests: that the 1/f noise is determined by the space charge region recombination process at small forward biases and by the minority carrier diffusion process at moderate forward biases.