NEW MOSFET MODEL SUITABLE FOR ANALOG IC ANALYSIS


ZEKI A., KUNTMAN H.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.78, ss.247-260, 1995 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 78 Konu: 2
  • Basım Tarihi: 1995
  • Doi Numarası: 10.1080/00207219508926156
  • Dergi Adı: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Sayfa Sayıları: ss.247-260

Özet

A static MOSFET model suitable for analogue integrated circuit analysis has been evolved. It was considered that an active device model for analogue IC analysis should represent the device nonlinear conductance-voltage dependence adequately as well as current-voltage relation. The most important characteristics, I(D)-V(DS) and g(ds)-V(DS), have been properly modelled. Precedence has been given to the modelling of channel-length modulation, which is the most dominant effect causing nonlinearities of the I(D)-V(DS) and g(ds)-V(DS) characteristics in the saturation region. With the aid of the developed model, I(D)-V(DS) and g(ds)-V(DS) curves for an NMOS and a PMOS transistor have been estimated and are seen to fit adequately with the curves obtained from measurements. Distortion analysis using the new model has been carried out for a CMOS active-loaded amplifier to check the adequacy of the new model for analogue IC analysis. The results obtained are similar to the experimental results.