NEW MOSFET MODEL SUITABLE FOR ANALOG IC ANALYSIS


ZEKI A., KUNTMAN H.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.78, no.2, pp.247-260, 1995 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 78 Issue: 2
  • Publication Date: 1995
  • Doi Number: 10.1080/00207219508926156
  • Title of Journal : INTERNATIONAL JOURNAL OF ELECTRONICS
  • Page Numbers: pp.247-260

Abstract

A static MOSFET model suitable for analogue integrated circuit analysis has been evolved. It was considered that an active device model for analogue IC analysis should represent the device nonlinear conductance-voltage dependence adequately as well as current-voltage relation. The most important characteristics, I(D)-V(DS) and g(ds)-V(DS), have been properly modelled. Precedence has been given to the modelling of channel-length modulation, which is the most dominant effect causing nonlinearities of the I(D)-V(DS) and g(ds)-V(DS) characteristics in the saturation region. With the aid of the developed model, I(D)-V(DS) and g(ds)-V(DS) curves for an NMOS and a PMOS transistor have been estimated and are seen to fit adequately with the curves obtained from measurements. Distortion analysis using the new model has been carried out for a CMOS active-loaded amplifier to check the adequacy of the new model for analogue IC analysis. The results obtained are similar to the experimental results.