Dielectric properties of sol-gel derived Ta2O5 thin films

Yildirim S., ULUTAS K., DEGER D., ZAYIM E., Turhan I.

VACUUM, cilt.77, sa.3, ss.329-335, 2005 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 77 Sayı: 3
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.vacuum.2004.12.002
  • Dergi Adı: VACUUM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.329-335
  • İstanbul Teknik Üniversitesi Adresli: Hayır

Özet

The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-10(5) Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed. (c) 2004 Elsevier Ltd. All rights reserved.