Investigation of Structural and Electrical Properties of Flat a-Si/c-Si Heterostructure Fabricated by EBPVD Technique

Demiroglu D., Tatar B., Kazmanli K., Urgen M.

3rd International Congress on Advances in Applied Physics and Materials Science, Antalya, Turkey, 24 - 28 April 2013, vol.1569, pp.158-161 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1569
  • Doi Number: 10.1063/1.4849249
  • City: Antalya
  • Country: Turkey
  • Page Numbers: pp.158-161
  • Istanbul Technical University Affiliated: Yes


Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructitre were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Phi(B), diode ideality factor eta were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.