Microstructure and Volta-potential analyses were conducted to characterise intermetallic-particles (IMPs) in AA7075-T5. EIS and AFM were applied under operando-conditions to investigate anodisation processes. IMPs have pronounced influence on the growth of anodic aluminium oxide (AAO) films resulting in low charge transfer resistance. Cu-bearing constituents show cathodic-character, whereas Mg2Si and MgZn2 particles show anodic-character. During anodisation, Al7Cu2Fe remain stable with peripheral-dissolution around boundary. De-alloying of S-phase particles leads to the detachment. Mg2Si undergoes de-alloying at low potential, and re-passivation at high potential. MgZn2 dissolves entirely upon anodization. Localised-dissolution in large-IMPs boundaries or nanometre-sized IMPs facilitates bubble evolution, confirming local breakdown of barrier-layer.