Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles


Alkis S., Chowdhury F. I., ALEVLİ M., Dietz N., Yalizay B., Akturk S., ...Daha Fazla

Journal of Optics (United Kingdom), cilt.17, sa.10, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 17 Sayı: 10
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1088/2040-8978/17/10/105903
  • Dergi Adı: Journal of Optics (United Kingdom)
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: particles, solar cell, enhancement, external quantum efficiency, internal quantum efficiency, efficiency, indium nitride, POROUS-SILICON, LASER-ABLATION, INN, PRESSURE, NANOCRYSTALS
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

© 2015 IOP Publishing Ltd.In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps.