Low voltage organic transistors with water-processed gum arabic dielectric

Seck M., Mohammadian N., Diallo A. K., Faraji S., Saadi M., Erouel M., ...More

Synthetic Metals, vol.267, 2020 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 267
  • Publication Date: 2020
  • Doi Number: 10.1016/j.synthmet.2020.116447
  • Journal Name: Synthetic Metals
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Biodegradable dielectric, Gum arabic (GA), Low voltage transistor operation, Organic thin film transistor (OTFT), Water-processed insulator
  • Istanbul Technical University Affiliated: No


In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime μsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ∼ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10−7 A/cm² at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.