A 2.7-2.9 GHz Class-F Power Amplifier with 50W Output Power, %75 Efficiency and Low Harmonic Content

Bozdemir S., Kizilbey O., Yazgı M., Palamutcuogullari O., Yarman B. S. B.

11th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 28 - 30 November 2019, pp.1088-1091 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: Bursa
  • Country: Turkey
  • Page Numbers: pp.1088-1091
  • Istanbul Technical University Affiliated: Yes

Abstract

In this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.