Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

İlik, Sadık; Gencer, Fikret; Solmaz, Nergiz; Çağlar, Alican; Yelten, Mustafa

doi:10.1016/j.nimb.2019.04.040

Radiation tolerance impact of trap density near the drain and source regions of a MOSFET

İlik S., Gencer F. B., Solmaz N. S., Çağlar A., Yelten M. B.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.449, ss.1-5, 2019 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 449
Basım Tarihi: 2019
Doi Numarası: 10.1016/j.nimb.2019.04.040
Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.1-5
İstanbul Teknik Üniversitesi Adresli: Evet

Özet

In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.