Radiation tolerance impact of trap density near the drain and source regions of a MOSFET


İlik S. , Gencer F. B. , Solmaz N. S. , Çağlar A. , Yelten M. B.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.449, pp.1-5, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 449
  • Publication Date: 2019
  • Doi Number: 10.1016/j.nimb.2019.04.040
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Page Numbers: pp.1-5

Abstract

In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.