Electrical Characterization of the Boron Trifluoride Doped Poly(3-aminoacetophenone)/p-Si Junction

Yakuphanoglu F., Şenkal B. F.

POLYMER ENGINEERING AND SCIENCE, vol.50, no.5, pp.929-935, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 50 Issue: 5
  • Publication Date: 2010
  • Doi Number: 10.1002/pen.21614
  • Page Numbers: pp.929-935


Electrical and interface state properties of the borontrifluoride doped poly(3-aminoacetophenone)/p-Si junction have been investigated by current-voltage and impedance spectroscopy methods. Al/p-Si/P(3)APBF(3)/Aldiode indicates a nonideal behavior with electrical parameters (n = 3.53, phi(B) = 0.82 eV, and R-s = 1.4.8 k Omega), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p-Si/P(3)APBF(3)/Aldiode is higher than that of the conventional Al/p-Si (phi(B) = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05 x 10(12) eV(-1) cm(-2). It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3-aminoacetophenone) organic semiconductor. POLYM. ENG. SCI., 50:929-935, 2010. (C) 2009 Society of Plastics Engineers