In this study, a new method for low temperature oxide deposition is discussed. Silicon dioxide was formed on silicon from silicic acid solution by using spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper shows a very low carbon contamination risk and does not suffer from crack formation. It is therefore suitable for a Variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temperatures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved.