A new study on spin-on-silica for multilevel interconnect applications


Kuntman A., Yenidunya R., Kasgoz A., Kuntman H.

MICROELECTRONICS JOURNAL, cilt.30, ss.127-131, 1999 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 30 Konu: 2
  • Basım Tarihi: 1999
  • Doi Numarası: 10.1016/s0026-2692(98)00099-8
  • Dergi Adı: MICROELECTRONICS JOURNAL
  • Sayfa Sayıları: ss.127-131

Özet

In this study, a new method for low temperature oxide deposition is discussed. Silicon dioxide was formed on silicon from silicic acid solution by using spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper shows a very low carbon contamination risk and does not suffer from crack formation. It is therefore suitable for a Variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temperatures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved.