A new study on spin-on-silica for multilevel interconnect applications

Kuntman A., Yenidunya R., Kasgoz A., Kuntman H.

MICROELECTRONICS JOURNAL, vol.30, no.2, pp.127-131, 1999 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 30 Issue: 2
  • Publication Date: 1999
  • Doi Number: 10.1016/s0026-2692(98)00099-8
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.127-131
  • Istanbul Technical University Affiliated: No


In this study, a new method for low temperature oxide deposition is discussed. Silicon dioxide was formed on silicon from silicic acid solution by using spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper shows a very low carbon contamination risk and does not suffer from crack formation. It is therefore suitable for a Variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temperatures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved.