A 180-nm X-Band Cryogenic CMOS LNA

Caglar A., Yelten M. B.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol.30, no.4, pp.395-398, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 30 Issue: 4
  • Publication Date: 2020
  • Doi Number: 10.1109/lmwc.2020.2979341
  • Journal Name: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.395-398
  • Keywords: Complementary metal-oxide-semiconductor (CMOS), cryogenics, linearity, low-noise amplifier (LNA)
  • Istanbul Technical University Affiliated: Yes

Abstract

This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) $X$ -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides $S_{11}$ and $S_{22}$ below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented $X$ -band cryogenic CMOS LNA in the literature.