Research Information System
APPLIED PHYSICS LETTERS, vol.95, no.7, 2009 (SCI-Expanded)
One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of similar to 3.5 nm/decade is observed without significant defect density. The n(+)/p(+) junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of similar to 8x10(18) cm(-3).