Statistical design of the four-MOSFET structure

Tarim T., Kuntman H., Ismail M.

42nd Midwest Symposium on Circuits and Systems, New Mexico, Amerika Birleşik Devletleri, 8 - 11 Ağustos 1999, ss.22-25 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Basıldığı Şehir: New Mexico
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.22-25


The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors an nonlinearity and offset current is provided through contours. Optimization of transistor W and L values are demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 mu m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.