Statistical design of the four-MOSFET structure


Tarim T., Kuntman H., Ismail M.

42nd Midwest Symposium on Circuits and Systems, New Mexico, United States Of America, 8 - 11 August 1999, pp.22-25 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: New Mexico
  • Country: United States Of America
  • Page Numbers: pp.22-25

Abstract

The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors an nonlinearity and offset current is provided through contours. Optimization of transistor W and L values are demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 mu m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.