Understanding thermal stress and warpage behavior of heterogeneous component assemblies is vital in infrared sensor applications of silicon semiconductor material. The silicon semiconductor warpage behavior of the integrated structure composed of silicon material itself, an adhesive layer and a ceramic layer is analyzed by both FEM and experimental studies. The studies are performed between room temperature and 80 K. Thickness of each layer has an effect on the warpage. The silicon warpage of the initial baseline trimaterial assembly is calculated as 10.92 μm while the assembly is cooled down from room temperature to 80 K. Parametric FEM analysis were carried out to reduce the warpage of the silicon material to 2.80 μm by altering the material thicknesses. Experimental results and FEM calculations show good coherence not only for the baseline case but also for all experimentally investigated cases. Experiments showed that the warpage of the silicon material is reduced by % 54.4 and it can be decreased further, according to the predictions of FEM analysis.