RESISTIVITY MINIMUM IN NI76-XMN24PTX AND NI72-XMN28PTX AMORPHOUS-ALLOYS


ONER Y. , KILIC A., CELIK H. M.

PHYSICA B, cilt.215, ss.205-212, 1995 (SCI İndekslerine Giren Dergi) identifier identifier

Özet

The electrical resistivity rho as a function of temperature has been measured for amorphous thin films of N76-xMn24Ptx (x = 0, 2, 5) and Ni72-xMn28Ptx(x = 0, 4, 10) alloys in the temperature range 1.5-400 K. The resistivity for every sample exhibits a low-temperature minimum, T-min, following the logarithmic dependence. The results show the presence of two effects: one of them, associated with Kondo-like scattering, exists for all samples, the other, the electron-localized spin-wave scattering mechanism is dominant for the samples with higher Mn concentrations. In addition, the resistivity shows quadratic temperature behaviour in the intermediate temperature range. The examination of the quadratic behaviours suggests that the scattering mechanism with magnetic origin is not negligible compared with that of the electron-structural disordered scattering. Furthermore, the present data permits us for the first time to compare the nature of the resistivity minimum at lower temperatures for each sample of amorphous Ni(76-)xMn(24)Pt(x) and Ni72-xMn28Ptx alloys with that of the corresponding alloys in the polycrystalline phase.