Tight binding modelling of band offsets in GaN and ZnSe based heterostructures

Unlu H.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol.235, no.2, pp.248-253, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 235 Issue: 2
  • Publication Date: 2003
  • Doi Number: 10.1002/pssb.200301564
  • Journal Name: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.248-253
  • Istanbul Technical University Affiliated: No

Abstract

We present a new nonorthogonal sp(3) tight binding model to study the band offsets of widegap heterostructures as a function of interface strain due to external pressure and lattice mismatch and thermal expansion gradient. As examples we discuss the GaN and ZnSe based heterostructures, because their properties are important for optoelectronic applications. Good agreement is found between theory and experiment for valence band offsets of various heterostructures at T = 300 K.