Tight binding modelling of band offsets in GaN and ZnSe based heterostructures

Unlu H.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.235, sa.2, ss.248-253, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 235 Sayı: 2
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1002/pssb.200301564
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.248-253
  • İstanbul Teknik Üniversitesi Adresli: Hayır

Özet

We present a new nonorthogonal sp(3) tight binding model to study the band offsets of widegap heterostructures as a function of interface strain due to external pressure and lattice mismatch and thermal expansion gradient. As examples we discuss the GaN and ZnSe based heterostructures, because their properties are important for optoelectronic applications. Good agreement is found between theory and experiment for valence band offsets of various heterostructures at T = 300 K.