Tight binding modelling of band offsets in GaN and ZnSe based heterostructures


Unlu H.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol.235, no.2, pp.248-253, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 235 Issue: 2
  • Publication Date: 2003
  • Doi Number: 10.1002/pssb.200301564
  • Title of Journal : PHYSICA STATUS SOLIDI B-BASIC RESEARCH
  • Page Numbers: pp.248-253

Abstract

We present a new nonorthogonal sp(3) tight binding model to study the band offsets of widegap heterostructures as a function of interface strain due to external pressure and lattice mismatch and thermal expansion gradient. As examples we discuss the GaN and ZnSe based heterostructures, because their properties are important for optoelectronic applications. Good agreement is found between theory and experiment for valence band offsets of various heterostructures at T = 300 K.