Tight binding modelling of band offsets in GaN and ZnSe based heterostructures


Unlu H.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.235, ss.248-253, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 235 Konu: 2
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1002/pssb.200301564
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
  • Sayfa Sayıları: ss.248-253

Özet

We present a new nonorthogonal sp(3) tight binding model to study the band offsets of widegap heterostructures as a function of interface strain due to external pressure and lattice mismatch and thermal expansion gradient. As examples we discuss the GaN and ZnSe based heterostructures, because their properties are important for optoelectronic applications. Good agreement is found between theory and experiment for valence band offsets of various heterostructures at T = 300 K.