Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

Seyidov, M.; SULEYMANOV, R.; Salehli, Ferid; BABAYEV, S.; MAMMADOV, T.; NADJAFOV, A.; SHARIFOV, G.

doi:10.1134/s1063783409030226

Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

Atıf İçin Kopyala

Seyidov M. -. Y. , SULEYMANOV R. A. , Salehli F. , BABAYEV S. S. , MAMMADOV T. G. , NADJAFOV A. I. , ...Daha Fazla

PHYSICS OF THE SOLID STATE, cilt.51, ss.568-576, 2009 (SCI İndekslerine Giren Dergi)

Cilt numarası: 51 Konu: 3
Basım Tarihi: 2009
Doi Numarası: 10.1134/s1063783409030226
Dergi Adı: PHYSICS OF THE SOLID STATE
Sayfa Sayıları: ss.568-576

Özet

The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.