Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

Seyidov M. -. Y., SULEYMANOV R. A., Salehli F., BABAYEV S. S., MAMMADOV T. G., NADJAFOV A. I., ...More

PHYSICS OF THE SOLID STATE, vol.51, no.3, pp.568-576, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 51 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1134/s1063783409030226
  • Journal Name: PHYSICS OF THE SOLID STATE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.568-576
  • Istanbul Technical University Affiliated: Yes

Abstract

The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.