Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

Seyidov M. -. Y. , SULEYMANOV R. A. , Salehli F. , BABAYEV S. S. , MAMMADOV T. G. , NADJAFOV A. I. , ...More

PHYSICS OF THE SOLID STATE, vol.51, no.3, pp.568-576, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 51 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1134/s1063783409030226
  • Title of Journal : PHYSICS OF THE SOLID STATE
  • Page Numbers: pp.568-576


The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.