Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

Seyidov M. -. Y., SULEYMANOV R. A., Salehli F., BABAYEV S. S., MAMMADOV T. G., NADJAFOV A. I., ...Daha Fazla

PHYSICS OF THE SOLID STATE, cilt.51, sa.3, ss.568-576, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 51 Sayı: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1134/s1063783409030226
  • Dergi Adı: PHYSICS OF THE SOLID STATE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.568-576
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.