ELECTROCHIMICA ACTA, vol.170, pp.63-71, 2015 (SCI-Expanded)
In this work, we deposit a bare and a Cu capped CuSi films (that contains 10% at. Cu 3 mu m thicknesses) by magnetron sputtering. The samples are galvanostatically tested with C/12 rate: the Cu capped CuSi film delivers 850 mAhg(-1) after 30th cycles, and it retains stable up to 100 cycle with 99% coulombic efficiency, whilst the bare CuSi film performs a gradual decrease in capacity over 100 cycles.