Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Ergen O., Gibb A., Vazquez-Mena O., Regan W. R., Zettl A.

APPLIED PHYSICS LETTERS, vol.106, no.10, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 106 Issue: 10
  • Publication Date: 2015
  • Doi Number: 10.1063/1.4914181
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Istanbul Technical University Affiliated: No

Abstract

We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date. (C) 2015 AIP Publishing LLC.