Design of a <bold>b</bold>ulk-<bold>i</bold>solated <bold>b</bold>andgap <bold>r</bold>eference with 3.7 ppm/degrees C TC in 0.35-m <bold>t</bold>riple-<bold>w</bold>ell CMOS <bold>p</bold>rocess


Basyurt P. B. , Aksin D. Y.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.104, no.1, pp.79-92, 2017 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 104 Issue: 1
  • Publication Date: 2017
  • Doi Number: 10.1080/00207217.2016.1186233
  • Title of Journal : INTERNATIONAL JOURNAL OF ELECTRONICS
  • Page Numbers: pp.79-92

Abstract

A bulk-isolated curvature-compensated bandgap voltage reference (BGR) compatible with triple-well CMOS technologies is presented in this paper. Verification results of the proposed BGR implemented in a 0.35-mu m 3.3-V triple-well CMOS technology demonstrate that the BGR achieves a reference voltage of 220.4mV with an average temperature coefficient (TC) of 3.7ppm/degrees C in the -40 to 130 degrees C range with 8-bit trimming. The measured current consumption and power supply rejection of the circuit are 33.15 mu A and -69.51dB at 100Hz, respectively (V-DD=3.3V). The circuit is capable of operating with supply voltages down to 2V and its line regulation is 0.16%/V over a voltage range from 2 to 3.6V. The root mean square output noise voltage in the 0.1-10Hz frequency range is 2.54 mu V. Moreover, measurement results show that the substrate noise sensitivity at the BGR output improved more than 30dB for frequencies up to 50kHz, thanks to the employed block bulk isolation strategy, although the effective improvement is expected to be more than 75dB without the coupling from the electrostatic discharge diode in the I/O pad.