A compact monitoring circuit for real-time on-chip diagnosis of hot-carrier induced degradation

Oner H., Bayrakci B., Leblebici Y.

1997 IEEE International Conference on Microelectronic Test Structures, Monterrey, Meksika, 17 - 20 Mart 1997, ss.72-76 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/icmts.1997.589340
  • Basıldığı Şehir: Monterrey
  • Basıldığı Ülke: Meksika
  • Sayfa Sayıları: ss.72-76
  • İstanbul Teknik Üniversitesi Adresli: Hayır

Özet

A very simple test/monitor circuit is presented which emulates the hot-carrier induced degradation of those critical circuits which are most susceptible to hot-carrier induced aging in a large system on chip. Delay-time degradation, as opposed to current degradation, is devised as a more realistic measure for monitoring long-term circuit reliability, and a simple method is presented for measuring this degradation. The hot-carder aging monitor is capable of issuing a warning signal (flag) when the amount of hot-carrier induced transient performance degradation in critical circuits on the chip exceeds a pre-determined limit value. The monitor circuitry occupies a very small silicon area; and it can be added to any large-scale design with a minimum of extra cost, at the end of the design cycle.