A compact monitoring circuit for real-time on-chip diagnosis of hot-carrier induced degradation

Oner H., Bayrakci B., Leblebici Y.

1997 IEEE International Conference on Microelectronic Test Structures, Monterrey, Mexico, 17 - 20 March 1997, pp.72-76 identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/icmts.1997.589340
  • City: Monterrey
  • Country: Mexico
  • Page Numbers: pp.72-76


A very simple test/monitor circuit is presented which emulates the hot-carrier induced degradation of those critical circuits which are most susceptible to hot-carrier induced aging in a large system on chip. Delay-time degradation, as opposed to current degradation, is devised as a more realistic measure for monitoring long-term circuit reliability, and a simple method is presented for measuring this degradation. The hot-carder aging monitor is capable of issuing a warning signal (flag) when the amount of hot-carrier induced transient performance degradation in critical circuits on the chip exceeds a pre-determined limit value. The monitor circuitry occupies a very small silicon area; and it can be added to any large-scale design with a minimum of extra cost, at the end of the design cycle.