Band offsets in III-nitride heterostructures


Unlu H. , ASENOV A.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.35, no.7, pp.591-594, 2002 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35 Issue: 7
  • Publication Date: 2002
  • Doi Number: 10.1088/0022-3727/35/7/303
  • Title of Journal : JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Page Numbers: pp.591-594

Abstract

We present a theoretical investigation of band offsets in GaN-based group III-nitride ternary/binary heterostructures with zinc blende structure. The band offsets in InGaN/GaN and AlGaN/GaN heterostructures were studied using the recently proposed extended sp(3) tight binding model (Unlu H 2001 Phys. Status Solidi. b 223 195). Simulations show a small valence band offset in AlGaN/GaN heterostructure and large valence band offset in the InGaN/GaN heterostructure. Furthermore, the tensile strain in AlGaN leads to positive bowing of the conduction band offsets in AlGaN/GaN heterostructure, and the compressive strain in InGaN leads to negative bowing of conduction band offsets in InGaN/GaN heterostructure as a function of composition. Good agreement is found between predictions and experiment.