In the presented work, a boron carbide sample with a purity of 99.9%, particle size 1-3 mu m and a density of 1.8 g/cm(3) was used. Boron carbide samples were irradiated with linear electrons in the energy range of 2.5 MeV at the doses of 4.16 x 10(16), 1.20 x 10(17) and 1.03 x 10(18) cm(-2) at room temperature. XRD results show that only in the crystal structure of B13C2 compound, among boron carbide samples irradiated in the dose rate from 4.16 x 10(16) cm(-2) to 1.03 x 10(18) cm(-2) phase transition does not occur. The observed decrease in the lattice parameter values was explained as the strengthening of the bonds as a result of the recombination of defects in the crystal by influencing electron fluence. Dynamics of Raman spectra change and analytic analysis of intensive and duplex modes in various electron fluxes in (B-12) CBC-structure were performed and the occurring disorder in Raman active has been identified.