Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

Baydogan N., Gokce Y., Baydogan M., Cimenoglu H.

8th International Conference on Diffusion in Solids Liquids (DSL 2012), İstanbul, Türkiye, 25 - 29 Haziran 2012, ss.349-350 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.4028/www.scientific.net/ddf.334-335.349
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.349-350
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800 degrees C, respectively. C-V results indicate an abrupt interface.