Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

Baydogan N., Gokce Y., Baydogan M. , Cimenoglu H.

8th International Conference on Diffusion in Solids Liquids (DSL 2012), İstanbul, Turkey, 25 - 29 June 2012, pp.349-350 identifier identifier


ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800 degrees C, respectively. C-V results indicate an abrupt interface.