A novel high frequency measurement method for determining the base resistance of the bipolar transistor is presented. The new method is based on the short-circuit input impedance measurements. The measurement is performed at lower frequencies compared to the circle-diagram method and therefore can be applied very easily. Furthermore, it is also possible to determine some other BJT parameters from these measurements. The new method is given in detail and correction factors to parasitics are derived. It was shown that the measurement results are in good agreement with results of conventional methods. (C) 1998 Elsevier Science Ltd. All rights reserved.