Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Ergen O., Gilbert S. M., Turner S. J., Zettl A.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol.253, no.12, pp.2478-2480, 2016 (SCI-Expanded) identifier identifier


We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.