Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure


Ergen O. , Gilbert S. M. , Turner S. J. , Zettl A.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.253, sa.12, ss.2478-2480, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 253 Konu: 12
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1002/pssb.201600234
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
  • Sayfa Sayıları: ss.2478-2480

Özet

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.