Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure


Ergen O. , Gilbert S. M. , Turner S. J. , Zettl A.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol.253, no.12, pp.2478-2480, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 253 Issue: 12
  • Publication Date: 2016
  • Doi Number: 10.1002/pssb.201600234
  • Title of Journal : PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
  • Page Numbers: pp.2478-2480

Abstract

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.