Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

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Ergen O., Gilbert S. M., Turner S. J., Zettl A.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol.253, no.12, pp.2478-2480, 2016 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 253 Issue: 12
• Publication Date: 2016
• Doi Number: 10.1002/pssb.201600234
• Journal Name: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.2478-2480
• Istanbul Technical University Affiliated: No

Abstract

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.