Low-voltage temperature sensor for micropower harvesters in silicon-on-sapphire CMOS

Kaya T., Koser H., Culurciello E.

ELECTRONICS LETTERS, vol.42, no.9, pp.526-528, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 42 Issue: 9
  • Publication Date: 2006
  • Doi Number: 10.1049/el:20060867
  • Title of Journal : ELECTRONICS LETTERS
  • Page Numbers: pp.526-528


A low-voltage temperature sensor designed for MEMS power harvesting systems is fabricated. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range 1-1.5 V The prototype was fabficated on a conventional 0.5 mu m silicon-on-sapphire (SOS) process. The sensor design consumes 15 mu A of current at I V The internal reference voltage is 550 mV The temperature sensor has a digital square wave output the frequency of which is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6 kHz/degrees C. The output is also independent of supply voltage in the range 1-1.5 V Measured results and targeted applications for the proposed circuit are reported.