Low-voltage temperature sensor for micropower harvesters in silicon-on-sapphire CMOS

Kaya T., Koser H., Culurciello E.

ELECTRONICS LETTERS, cilt.42, sa.9, ss.526-528, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Konu: 9
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1049/el:20060867
  • Sayfa Sayıları: ss.526-528


A low-voltage temperature sensor designed for MEMS power harvesting systems is fabricated. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range 1-1.5 V The prototype was fabficated on a conventional 0.5 mu m silicon-on-sapphire (SOS) process. The sensor design consumes 15 mu A of current at I V The internal reference voltage is 550 mV The temperature sensor has a digital square wave output the frequency of which is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6 kHz/degrees C. The output is also independent of supply voltage in the range 1-1.5 V Measured results and targeted applications for the proposed circuit are reported.