A Novel Architecture for Photovoltaic Devices: Field-effect Solar Cells Using Screening-engineered Nanoelectrodes for Silicon and Earth Abundant Cuprous Oxide


Vazquez-Mena O., Regan W., Byrnes S., Ergen O. , Gannett W., Wang F., ...Daha Fazla

39th IEEE Photovoltaic Specialists Conference (PVSC), Tama, Japonya, 16 - 21 Haziran 2013, ss.3284-3286 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1109/pvsc.2013.6745152
  • Basıldığı Şehir: Tama
  • Basıldığı Ülke: Japonya
  • Sayfa Sayıları: ss.3284-3286

Özet

We present a novel photovoltaic cell architecture based on the electric field effect that controls carrier concentration in semiconductors using screening-engineered nanostructured electrodes. The device operates in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This architecture does not require any doping process or a heterojunction, opening an alternative path to fabricate cells on hard-to-dope materials such as oxides or phosphides. As a proof of concept, we present a field effect solar cell made of Si. To demonstrate the potential of this configuration for alternative materials, we also present a field-effect solar cell made of cuprous oxide, which has a favorable band gap but that is difficult to dope. We control the behavior of the devices with the gate voltage that forms an inversion layer and hence a rectifying p-n junction.