A Silicon-on-Sapphire low-voltage temperature sensor for energy scavengers

Kaya T., Koser H., Culurciello E.

IEEE International Symposium on Circuits and Systems, Louisiana, United States Of America, 27 - 30 May 2007, pp.2455-2456 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/iscas.2007.378617
  • City: Louisiana
  • Country: United States Of America
  • Page Numbers: pp.2455-2456
  • Istanbul Technical University Affiliated: Yes


We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5 mu m Silicon-on-Sapphire (SOS) process. The sensor design consumes 15 mu A of current at M The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/degrees C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.