A Silicon-on-Sapphire low-voltage temperature sensor for energy scavengers

Kaya T. , Koser H., Culurciello E.

IEEE International Symposium on Circuits and Systems, Louisiana, Amerika Birleşik Devletleri, 27 - 30 Mayıs 2007, ss.2455-2456 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/iscas.2007.378617
  • Basıldığı Şehir: Louisiana
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.2455-2456


We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5 mu m Silicon-on-Sapphire (SOS) process. The sensor design consumes 15 mu A of current at M The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/degrees C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.