Regular growth combined with lateral etching in diamond deposited over silicon substrate by using hot filament chemical vapor deposition technique


Ali M., Ürgen M. K.

APPLIED SURFACE SCIENCE, cilt.273, ss.730-734, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 273
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.apsusc.2013.02.124
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayıları: ss.730-734

Özet

Hot filament chemical vapor deposition has proved to be an attractive method for growing diamond films with good quality and higher growth rate. Diamond films were produced at deposition parameters under which, it is possible to have regular growth combined with lateral etching (RGCLE). Fracture cross-section SEM images showed that RGCLE initiated over polycrystalline diamond film and proceeded by the growth of consecutive steps in each crystallite, which terminated with square/rectangle shaped facets. All the diamond films exhibit RGCLE but with different type of growth behavior. Present work discusses the cyclic formation of the steps in diamond crystallites and RGCLE modes. RGCLE in diamond film may find important applications where heat absorption and dissipation are key issues. (c) 2013 Elsevier B.V. All rights reserved.