In this work, we present the design of a 2W linear wideband microwave PA (power amplifier) targeted to operate in 824-2170 MHz mobile frequency range covering GSM850, EGSM, DCS, PCS and WCDMA. The design is basically based on the NGF (Normalized Gain Function) method which is very recently introduced into the literature. NGF is defined as the ratio of T and |S-21|(2), i.e. T-NGF= T/|S-21|(2), shape of the gain function of the amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN) of the amplifier requires target gain functions, which are mathematically generated in terms of TNGF. The particular transistor used in the design is FP31QF, a 2W HFET from TriQuint Semiconductor. Theoretical PA performance obtained in Matlab is shown to be in a very high agreement with the simulated performance in MWO (Microwave Office) of AWR Inc.