A comparative study for profiling ultrathin boron layers in Si

Basaran E., Addemir O., Aslan M., Parker E.

CRYSTAL RESEARCH AND TECHNOLOGY, vol.38, no.12, pp.1037-1041, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 12
  • Publication Date: 2003
  • Doi Number: 10.1002/crat.200310132
  • Journal Name: CRYSTAL RESEARCH AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1037-1041
  • Istanbul Technical University Affiliated: No

Abstract

The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.