International Conference on Nuclear Technology, Radiation Safety and Advanced Technological Researches (ICNRA 2021), Canada, 10 - 11 December 2021, vol.1, no.124, pp.149
ZnO structure has Wurtzite crystal structure it has wide band gap (3.3 eV) and II-VI compound
semiconductors. It has large exitation energy of 60 meV with high optical transmittance in the visible
region (%80-90). ZnO layers can block 95% of all UV radition. Umpurity doped ZnO has good transparent
conductiong oxide (TCO) characteristics. Low optical loss and good electrical conductivity. It has n-type
semiconductor [1-3]. Grain size of the ZnO films was larger at 700C than the others, over 800C the
difference between grain size increased and caused voids and pinholes on the film surface. Annealing
temperature has influenced the optical properties of the films.