Band offsets and current transport in GaN based HBTs

Unlu H.

International Workshop on Nitride Semiconductors (IWN 2000), Nagoya, Japan, 24 - 27 September 2000, vol.1, pp.977-980 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1
  • City: Nagoya
  • Country: Japan
  • Page Numbers: pp.977-980
  • Istanbul Technical University Affiliated: Yes

Abstract

An analytic model is proposed for the current transport and performance simulation of GaN based heterojunction bipolar transistors (HBTs). The model uses the extended tight binding theory (ETB) to determine band offsets and implements them, by defining an intrinsic carrier density at heterointerface, in the recently developed extended drift-diffusion (EDD) model to describe the current transport in HBTs at any level of carrier injection.