Band offsets and current transport in GaN based HBTs

Unlu H.

International Workshop on Nitride Semiconductors (IWN 2000), Nagoya, Japonya, 24 - 27 Eylül 2000, cilt.1, ss.977-980 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1
  • Basıldığı Şehir: Nagoya
  • Basıldığı Ülke: Japonya
  • Sayfa Sayıları: ss.977-980
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

An analytic model is proposed for the current transport and performance simulation of GaN based heterojunction bipolar transistors (HBTs). The model uses the extended tight binding theory (ETB) to determine band offsets and implements them, by defining an intrinsic carrier density at heterointerface, in the recently developed extended drift-diffusion (EDD) model to describe the current transport in HBTs at any level of carrier injection.