Modelling of bandgap and band offset properties in III-N related heterostructures

Akinci O., GUREL H., Unlu H.

SUPERLATTICES AND MICROSTRUCTURES, vol.36, pp.685-692, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 36
  • Publication Date: 2004
  • Doi Number: 10.1016/j.spmi.2004.09.049
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.685-692
  • Istanbul Technical University Affiliated: No


Reliable and precise knowledge about the strain and composition effects on the electronic properties is crucial for the optimization of III-nitride based heterostructures for electronic and optoelectronic device applications. Using the nearest neighbor sp(3)s* semi-empirical tight binding formalism, we investigated the composition effects on bandgaps and offsets in pseudomorphic InGaN/GaN and GaAsN/GaAs heterostructures with zinc-blende structures. The strain effects are incorporated afterwards in a semi-empirical way. The model should be useful in understanding the effects of composition and strain on heterostructure energy band properties. (C) 2004 Elsevier Ltd. All rights reserved.