3.5-3.8 GHz class-E balanced GaN HEMT power amplifier with 20 W Pout and 80% PAE

Kizilbey O., Palamutcuogullari O., Yarman S. B.

IEICE ELECTRONICS EXPRESS, cilt.10, sa.5, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 5
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1587/elex.10.20130104
  • Dergi Adı: IEICE ELECTRONICS EXPRESS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • İstanbul Teknik Üniversitesi Adresli: Evet

Özet

In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254 mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20 W (43 dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.