Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state

Senturk E., Tumbek L., Mikailov F. A., Saiehli F.

CRYSTAL RESEARCH AND TECHNOLOGY, vol.42, no.6, pp.626-630, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 42 Issue: 6
  • Publication Date: 2007
  • Doi Number: 10.1002/crat.200610875
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.626-630
  • Istanbul Technical University Affiliated: No


The results of investigations low frequency dielectric relaxation in layered ferroelectric TlInS2 crystals are presented. The measurements were performed in the temperature range of 180-230 K and in the frequency range of 5 kHz-1 MHz. Two different relaxation processes were observed in mentioned temperature interval. The crystal has "slow" and "fast" relaxation mechanisms in low and high frequency region, respectively. The presence of two different relaxation mechanisms in TlInS, is discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.